Physical Properties of Silicon

SiFusion furnaceware is clean to <1.0 E10 / cm2 for all trace metals.

Silicon is a naturally occurring element in the earth’s crust. Its conductivity properties make it an ideal semiconducting material, and it is the primary material used in semiconductor wafers up to 300 mm in diameter.

The polycrystalline silicon in SiFusion is elemental silicon in a non-oriented crystalline form.

Physical Properties of Silicon

Identification	Silicon
Symbol	Si
State (std. Cond.)	Solid
Atomic	28.086
Melting Point, ºC	1,414
Boiling Point, ºC	2,878
Critical Temperature, ºC	4,886
Critical Pressure, atm	530
Critical Volume, cm3/gmol	232.6
Critical Density, g/cm3	0.1207
Vapor Pressure, mm Hg	2.8(10^-4) (at m.p.)
Heat of Vaporization, cal/g	3,812 (at m.p.)
Heat of Sublimation, cal/g	4,705 (at m.p.)
Heat of Fusion, cal/g	264 (at m.p.)
Liquid Heat Cap., cal/g mol ºC	6.755 (at m.p.)
Solid Heat Cap., cal/g mol ºC	4.78 (at 25ºC)
Solid heat Cap., JKg/m mol (at 25ºC)	703
Liquid Density	2.533 (at m.p.)
Solid Density	2.329 (at 25ºC)
Percent Expansion on Freezing	10% (at m.p.)
Surface T	736 (at m.p.)
Liquid Viscosity	0.88 (at m.p.)
Liquid Thermal Cond., cal/sec cmºC	1.025 (10^-3) (at m.p.)
Solid thermal cond., cal/sec cmºC	0.353 (at 25ºC)
Solid Thermal Cond., W/m	163
Hardness, knops Kg/mm	1150
Hardness, mobs	7
Bulk Modules, dyne/cm2	9.8 (10¹¹)
Bulk Modules, Gpa	102
Young Modulus, dyne/cm2	1.3 (10¹²)
Young Modulus, Gpa	131
Coefficient of Thermal Expansion m/ ºC	2.6 (10^-6)
Specific Heat, cal/g ºC	0.18
Atomic Density, atom cm2	4.96 (10²²)
Refractive Index, 4µ	3.4255
dn/dt ºC	1.6 (10^-4)
Percent Transmission Uncoated, 4µ	53.8
Transmission Range, µ	1.2-7 & 45-100
Dielectric	11.8
Elastic Constant, C11 dyne/cm2	1.656 (10¹²)
Elastic Constant, C12 dyne/cm2	0.639 (10¹²)
Elastic Constant, C14 dyne/cm2	0.795 (10¹²)
Rupture Modules, bending, kg/cm2	700-3,500
Breaking Strength, Compression kg/cm2	4,900-5,600
Breaking Strength, Compression Mpa	120
Poisson Ratio	0.28

Additional resources for Silicon Science: